Samsung M386ABG40M51-CAE memory module 256 GB 1 x 256 GB DDR4 3200 MHz ECC

SKU
M386ABG40M51-CAE
Login for pricing
In stock
256 GB, DDR4, 288-pin, LRDIMM, 3200 MHz
Load reduced DIMM Includes a register for enhancing clock, command and control signals Enhanced data signal by placing data buffer Best solution for achieving high density with high speed Supports x4 Organization / up to 4 ranks per DIMM and 3DPC Application : Server
SKU M386ABG40M51-CAE
Specification
Power
Memory voltage1.2 V
Memory
Buffered memory typeLoad reduced
Memory layout (modules x size)1 x 256 GB
Internal memory256 GB
Component forPC/Server
Memory form factor288-pin DIMM
CAS latency26
Memory voltage1.2 V
ECCYes
Memory clock speed3200 MHz
Internal memory typeDDR4
Features
Buffered memory typeLoad reduced
Memory layout (modules x size)1 x 256 GB
Internal memory256 GB
Component forPC/Server
Memory form factor288-pin DIMM
CAS latency26
Memory voltage1.2 V
ECCYes
Memory clock speed3200 MHz
Internal memory typeDDR4
Manufacturer Samsung
In Stock Y